Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces Mullite tube can be used

Mullite tube can be used up to 1650 oC in both oxidizing and reduce atmospheres

Application Note If your slurry viscosity is high

Temperature control console provides up to 30 segments programmable with +/- 1 ºC accuracy

Material: Polypropylene

Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces Mullite tube can be usedFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 0. 25" x 0. 25" x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A Package: Each wafer is packed in 1000 class clean room with 100 grade