Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Make wet film thickness between

Make wet film thickness between 0 - 3000 microns

Growth method                                     LEC

Related Product SrTiO3

controller's PCB  (The number of the modules to be supplied will be dependent on the heating zones of the furnace)

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Make wet film thickness betweenSingle crystal Si, Conductivity: N type ( P doped) Size: 5" diameter x 0. 625 mm Orientation: (100) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: One side polished Surface roughness: < 5A Packing : In single wafer carrier box Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma